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October 1997
FDC6302P
Digital FET, Dual P-Channel
General Description
These Dual P-Channel logic level enhancement mode field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This device
has been designed especially for low voltage applications as a
replacement for digital transistors in load switchimg applications.
Since bias resistors are not required this one P-Channel FET
can replace several digital transistors with different bias resistors
like the IMBxA series.
Features
-25 V, -0.12 A continuous, -0.5 A Peak.
R DS(ON) = 13 ? @ V GS = -2.7 V
R DS(ON) = 10 ? @ V GS = -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V GS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple PNP digital transistors (IMHxA series) with
one DMOS FET.
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
4
5
6
3
2
1
Absolute Maximum Ratings
T A = 25 o C unless other wise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
FDC6302P
-25
-8
Units
V
V
I D
Drain Current
- Continuous
-0.12
A
- Pulsed
-0.5
P D
Maximum Power Dissipation
(Note 1a)
0.9
W
(Note 1b)
0.7
T J ,T STG
ESD
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
-55 to 150
6.0
°C
kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
140
60
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
FDC6302P Rev.C
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相关PDF资料
FDC6303N IC FET DGTL N-CH DUAL 25V SSOT6
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相关代理商/技术参数
FDC6302P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH DUAL 25V 0.12A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH DUAL 25V 0.12A SSOT6; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-25V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
FDC6302P 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL P MOSFET -25V -120mA SUPERSOT6
FDC6302P_Q 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6303 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Digital FET, Dual N-Channel
FDC6303N 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6303N_Q 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6304P 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET